| PART |
Description |
Maker |
| EIA1314A-2P |
13.0-14.5GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1314-4P EIB1314-4P |
13.75-14.5GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1314-8P |
13.75-14.5GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1414-4P |
14.0-14.5GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1314A-4P |
13.0-14.5GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| MGFK37V4045_97 MGFK37V4045 MGFK37V404597 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7785A C367785A |
From old datasheet system
7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7785A C397785A |
From old datasheet system
7.7 - 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK33V4045_97 MGFK33V4045 MGFK33V404597 |
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
